Growth conditions influence on thermally stimulated luminescence of sapphire single crystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Growth conditions influence on thermally stimulated luminescence of sapphire single crystals
|
|
| Creator |
Blonskyy, I.V.
Vakhnin, A.Yu. Danko, A.Ya. Kadashchuk, A.K. Kadan, V.N. Sidelnikova, N.S. Puzikov, V.M. Skryshevskii, Yu.A. |
|
| Description |
The results of investigation of thermally stimulated and photoluminescence as well as absorption spectra of a-sapphire grown by a technique of horizontally directed crystallization in a protective gas medium of varying composition and pressure are presented. This technique has an advantage of minimization of W and Mo erosion, thus providing a considerably reduced prime cost. At the same time, there are some problems connected with emergence of considerable number of anion vacancies, whose in-axis concentration gradient is directed oppositely to that of dopants (mainly Ti). The correlations are found between the conditions of -sapphire growing and the data of absorption and luminescent spectroscopy. An interaction between the anion vacancies and Ti dopants, which induces a transition from electric-charge state Ti⁴+ to Ti³+, is discussed.
|
|
| Date |
2017-06-14T07:46:37Z
2017-06-14T07:46:37Z 2002 |
|
| Type |
Article
|
|
| Identifier |
Growth conditions influence on thermally stimulated luminescence of sapphire single crystals / I.V. Blonskyy, A.Yu. Vakhnin, A.Ya. Danko, A.K. Kadashchuk, V.N. Kadan, N.S. Sidelnikova, V.M. Puzikov, Yu.A. Skryshevskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 420-424. — Бібліогр.: 11 назв. — англ.
1560-8034 PACS: 78.60.Kn, 78.55.Hx, 42.70.Hj, 71.55.Ht http://dspace.nbuv.gov.ua/handle/123456789/121349 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|