Modified optical OR and AND gates
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Modified optical OR and AND gates
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| Creator |
Srinivasulu, Avireni
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| Description |
This paper deals with optical OR and AND gate, using unijunction transistor (UJT), light emitting diode (LED), and photo-resistor (LDR). Effort is made to extend the development of the gates using UJT, LDR, and LED to work at 1.8 Vdc instead of 3 Vdc. The power dissipation is approximately 2 mW. These optical gates find application in the field of instrumentation, optical logic isolators, and fiber optics systems where intrinsic safety is of prime importance rather than speed of operation.
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| Date |
2017-06-14T07:47:47Z
2017-06-14T07:47:47Z 2002 |
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| Type |
Article
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| Identifier |
Modified optical OR and AND gates / Avireni Srinivasulu // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 428-430. — Бібліогр.: 8 назв. — англ.
1560-8034 PACS: 42.65.Pc http://dspace.nbuv.gov.ua/handle/123456789/121352 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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