A universal automated complex for control and diagnostics of semiconductor devices and structures
Vernadsky National Library of Ukraine
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
A universal automated complex for control and diagnostics of semiconductor devices and structures
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Creator |
Konakova, R.V.
Rengevych, O.E. Kurakin, A.M. Kudryk, Ya.Ya. |
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Description |
We present a universal automated complex for control and diagnostics. It is intended to measure static, pulse and capacitance-voltage characteristics of two- and three-terminal networks, both at room temperature and in 77-1000 K temperature range. A distinguishing feature of complex construction is the possibility for simulation of interrelation between parameters of the objects studied. The complex has been tested when studying the effect of g- and microwave radiations on parameters of gallium arsenide SB-FETs, GaN-based HEMTs and silicon carbide SBDs.
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Date |
2017-06-14T07:51:41Z
2017-06-14T07:51:41Z 2002 |
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Type |
Article
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Identifier |
A universal automated complex for control and diagnostics of semiconductor devices and structures / R.V. Konakova, O.E. Rengevych, A.M. Kurakin, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 449-452. — Бібліогр.: 14 назв. — англ.
1560-8034 PACS: 85.30 http://dspace.nbuv.gov.ua/handle/123456789/121359 |
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Language |
en
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Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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