Запис Детальніше

A universal automated complex for control and diagnostics of semiconductor devices and structures

Vernadsky National Library of Ukraine

Переглянути архів Інформація
 
 
Поле Співвідношення
 
Title A universal automated complex for control and diagnostics of semiconductor devices and structures
 
Creator Konakova, R.V.
Rengevych, O.E.
Kurakin, A.M.
Kudryk, Ya.Ya.
 
Description We present a universal automated complex for control and diagnostics. It is intended to measure static, pulse and capacitance-voltage characteristics of two- and three-terminal networks, both at room temperature and in 77-1000 K temperature range. A distinguishing feature of complex construction is the possibility for simulation of interrelation between parameters of the objects studied. The complex has been tested when studying the effect of g- and microwave radiations on parameters of gallium arsenide SB-FETs, GaN-based HEMTs and silicon carbide SBDs.
 
Date 2017-06-14T07:51:41Z
2017-06-14T07:51:41Z
2002
 
Type Article
 
Identifier A universal automated complex for control and diagnostics of semiconductor devices and structures / R.V. Konakova, O.E. Rengevych, A.M. Kurakin, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 449-452. — Бібліогр.: 14 назв. — англ.
1560-8034
PACS: 85.30
http://dspace.nbuv.gov.ua/handle/123456789/121359
 
Language en
 
Relation Semiconductor Physics Quantum Electronics & Optoelectronics
 
Publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України