Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing
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| Creator |
Litvinov, V.L.
Demakov, K.D. Agueev, O.A. Svetlichny, A.M. Konakova, R.V. Lytvyn, P.M. Lytvyn, O.S. Milenin, V.V. |
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| Description |
Using X-ray phase analysis, Auger electron spectroscopy and atomic force microscopy, we investigated structural-phase transformations in the Ni/n-21R-SiC system induced by rapid thermal annealing in a vacuum (pressure of 10-² Pa) in the 450-1100 °С temperature range. It was found that modification of contact I-V curves from barrier-type to ohmic is due to appearance of local contact areas with different barrier heights (among them areas with ohmic conduction). Generation of the above nonuniformities results from intense heterodiffusion of the system components, as well as formation and recrystallization of various nickel silicide phases (differing in stoichiometry) and degradation of planar uniformity of both interface and Ni film.
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| Date |
2017-06-14T07:53:30Z
2017-06-14T07:53:30Z 2002 |
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| Type |
Article
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| Identifier |
Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing / V.L. Litvinov, K.D. Demakov, O.A. Agueev, A.M. Svetlichny, R.V. Konakova, P.M. Lytvyn, O.S. Lytvyn, V.V. Milenin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 457-464. — Бібліогр.: 12 назв. — англ.
1560-8034 PACS: 73.40.Ns, 73.30.+y http://dspace.nbuv.gov.ua/handle/123456789/121364 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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