Fabrication and electrical characteristics of nano black phosphorus thin film transistor
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Fabrication and electrical characteristics of nano black phosphorus thin film transistor
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| Creator |
Wang Lie-long
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| Subject |
Characterization and properties
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| Description |
This text introduced a method to fabricate black phosphorus(BP) nanosheet field effect transistor(FET). The X ray diffraction analysis, scanning electron microscopy, and FET performance of the black phosphorus products were analyzed, and the output characteristic curves and the transfer characteristic curves were obtained. When BP's thickness was 14nm, the hole mobility was 244 cm2/Vs and on/off ratio was ~10³. The result shows that black phosphorus nanosheet field effect transistor has good on/off ratio and hole mobility. It will lay an important foundation for future optoelectronic devices as an alternative material.
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| Date |
2017-06-14T09:39:14Z
2017-06-14T09:39:14Z 2016 |
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| Type |
Article
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| Identifier |
Fabrication and electrical characteristics of nano black phosphorus thin film transistor / Wang Lie-long // Functional Materials. — 2016. — Т. 23, № 3. — С. 404-407. — Бібліогр.: 15 назв. — англ.
1027-5495 DOI: dx.doi.org/10.15407/fm23.03.404 http://dspace.nbuv.gov.ua/handle/123456789/121408 |
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| Language |
en
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| Relation |
Functional Materials
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| Publisher |
НТК «Інститут монокристалів» НАН України
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