Investigation of cadmium telluride films on silicon substrate
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Investigation of cadmium telluride films on silicon substrate
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| Creator |
Odarych, V.A.
Sarsembaeva, A.Z. Sizov, F.F. Vuichyk, M.V. |
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| Description |
Properties of cadmium telluride films on silicon substrate, distribution of thickness and refraction index over the sample area were investigated by the ellipsometric method. It was ascertained that the refraction index of cadmium telluride films on a silicon substrate was considerably less than that of monocrystalline CdTe and depends on the film thickness, increasing with the thickness growth.
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| Date |
2017-06-14T16:10:13Z
2017-06-14T16:10:13Z 2005 |
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| Type |
Article
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| Identifier |
Investigation of cadmium telluride films on silicon substrate / V.A. Odarych, A.Z. Sarsembaeva, F.F. Sizov, M.V. Vuichyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 55-59. — Бібліогр.: 7 назв. — англ.
1560-8034 PACS 68.35.-p, 73.20.-r http://dspace.nbuv.gov.ua/handle/123456789/121545 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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