Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice
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| Creator |
Abouelaoualim, D.
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| Description |
We investigate theoretically the effect of nonparabolic band structure on the electron-confined LO-phonon scattering rate in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice. Using the quantum treatment, the new wave function of electron miniband conduction of superlattice and a reformulation of the slab model for the confined LO-phonon modes has been considered. An expression for the scattering rates has been obtained. Our results show that, for transitions related to the emission of confined LO-phonon, the scattering rates are significantly increased in the band nonparabolicity case.
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| Date |
2017-06-14T16:44:30Z
2017-06-14T16:44:30Z 2005 |
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| Type |
Article
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| Identifier |
Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice / D. Abouelaoualim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 60-64. — Бібліогр.: 42 назв. — англ.
1560-8034 PACS 71.20.-b, 73.21.Cd http://dspace.nbuv.gov.ua/handle/123456789/121558 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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