Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis
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| Creator |
Belyaev, A.E.
Bobyl, A.V. Boltovets, N.S. Ivanov, V.N. Konakova, R.V. Konnikov, S.G. Kudryk, Ya.Ya. Markovskiy, E.P. Milenin, V.V. Rudenko, E.M. Tereschenko, G.F. Ulin, V.P. Ustinov, V.M. Tsirlin, G.E. Shpak, A.P. |
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| Description |
The n⁺-n-n⁺-n⁺⁺-GaAs epitaxial structures were MBE-grown on porous nanostructured and traditional (standard) heavily doped n⁺⁺-GaAs substrates. On their basis, we fabricated the Gunn diodes generating power output in the 44−59 GHz (first harmonic) and 101−104 GHz (second harmonic) frequency ranges. For both harmonics, the power output of the Gunn diodes grown on porous substrates was shown to be from 20 to 30 % higher than those grown on the flat ones.
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| Date |
2017-06-14T16:46:32Z
2017-06-14T16:46:32Z 2005 |
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| Type |
Article
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| Identifier |
Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis / A.E. Belyaev, A.V. Bobyl, N.S. Boltovets, V.N. Ivanov, R.V. Konakova, S.G. Konnikov, Ya.Ya. Kudryk, E.P. Markovskiy, V.V. Milenin, E.M. Rudenko, G.F. Tereschenko, V.P. Ulin, V.M. Ustinov, G.E. Tsirlin, A.P. Shpak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 65-71. — Бібліогр.: 7 назв. — англ.
1560-8034 PACS 68.55.Ac, 81.15.-z, 85.30.Kk http://dspace.nbuv.gov.ua/handle/123456789/121562 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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