Porous nanostructured InP: technology, properties, application
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Porous nanostructured InP: technology, properties, application
|
|
| Creator |
Arsentyev, I. N.
Bobyl, A.B. Konnikov, S.G. Tarasov, I.S. Ulin, V.P Shishkov, M.V. Boltovets, N.S. Ivanov, V.N. Belyaev, A.E. Konakova, R.V. Kudryk, Ya.Ya. Kamalov, A.B. Lytvyn, P.M. Markovskiy, E.P. Milenin, V.V. Red’ko, R.A. |
|
| Description |
We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP epilayers grown on them were studied. These InP epilayers grown on the porous and standard InP substrates were used to make microwave diodes. We showed the advantages of the diodes made on the porous substrates (over those made on the standard ones) caused by higher structural perfection of the InP epilayers grown on the porous substrates.
|
|
| Date |
2017-06-14T16:55:09Z
2017-06-14T16:55:09Z 2005 |
|
| Type |
Article
|
|
| Identifier |
Porous nanostructured InP: technology, properties, application / I. N. Arsentyev, A.B. Bobyl, S.G. Konnikov, I.S. Tarasov, V.P Ulin, M.V. Shishkov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, R.V. Konakova, Ya.Ya. Kudryk, A.B. Kamalov, P.M. Lytvyn, E.P. Markovskiy, V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 95-104. — Бібліогр.: 18 назв. — англ.
1560-8034 PACS 81.05.Rm http://dspace.nbuv.gov.ua/handle/123456789/121572 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|