New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis
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| Creator |
Arsentyev, I.N.
Bobyl, A.V. Tarasov, I.S. Shishkov, M.V. Boltovets, N.S. Ivanov, V.N. Kamalov, A.B. Konakova, R.V. Kudryk, Ya.Ya. Lytvyn, O.S. Lytvyn, P.M. Markovskiy, E.P. Milenin, V.V. |
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| Description |
A novel technological approach to fabrication of n-InP autoepitaxial films LPE-grown on porous n⁺-InP substrates, as well as ohmic and barrier contacts to them using (quasi)amorphous TiBx interstitial phases, is proposed. We demonstrate the advantages of TiBx−n-n⁺-n⁺⁺-InP Schottky-barrier diodes made on porous substrates over those made on the standard rigid substrates, as well as the possibility to make Gunn diodes (intended for the 120−150 GHz frequency range) on the InP epitaxial structures grown on porous substrates.
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| Date |
2017-06-14T16:57:19Z
2017-06-14T16:57:19Z 2005 |
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| Type |
Article
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| Identifier |
New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis / I.N. Arsentyev, A.V. Bobyl, I.S. Tarasov, M.V. Shishkov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, A.B. Kamalov, R.V. Konakova, Ya.Ya. Kudryk, O.S. Lytvyn, P.M. Lytvyn, E.P. Markovskiy, V.V. Milenin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 105-114. — Бібліогр.: 29 назв. — англ.
1560-8034 PACS 81.05.Rm http://dspace.nbuv.gov.ua/handle/123456789/121574 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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