Optical properties of p-type porous GaAs
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Optical properties of p-type porous GaAs
|
|
| Creator |
Kidalov, V.V.
Beji, L. Sukach, G.A. |
|
| Description |
Samples of p-type porous GaAs was obtained by electrochemical anodization of (100) oriented p-type GaAs. The formation of porous structure has been confirmed by Raman spectroscopy and scanning electron microscopy investigations. The low-frequency Raman shift of the peaks conditioned by the main optical phonons was observed in the Raman spectra of the porous GaAs. Estimation of the size of nanocryslallites in porous GaAs both by Raman shift and scanning electron microscopy gives approximately the same values and was about 10-20 nm. Photoluminescence investigations of porous GaAs exhibit the presence of two infrared and one visible bands.
|
|
| Date |
2017-06-14T16:58:20Z
2017-06-14T16:58:20Z 2005 |
|
| Type |
Article
|
|
| Identifier |
Optical properties of p-type porous GaAs / V.V. Kidalov, L. Beji, G.A. Sukach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 118-120. — Бібліогр.: 13 назв. — англ.
1560-8034 PACS 61.10.Kw, 78.55.Cr, 78.55.Mb, 79.60.Dp http://dspace.nbuv.gov.ua/handle/123456789/121575 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|