Запис Детальніше

Excitons and trions in spherical semiconductor quantum dots

Vernadsky National Library of Ukraine

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Поле Співвідношення
 
Title Excitons and trions in spherical semiconductor quantum dots
 
Creator Kupchak, I.M.
Kryuchenko, Yu.V.
Korbutyak, D.V.
 
Description An original iterative procedure has been developed to obtain energy spectrum of neutral and charged excitons (positive and negative trions) in spherical semiconductor quantum dots (QD) imbedded into a dielectric material. Numerical calculations are made using the effective mass approximation and Hartree-Fock method. A combined effect of heterointerface polarization (image force potential) and finite band-off-sets on the energy spectrum of excitons and trions in QDs is considered for the first time. It is shown that binding energies of excitons and trions in such QDs can be substantially larger than those in bulk semiconductors due to spatial and “dielectric” confinement effects.
 
Date 2017-06-14T17:09:39Z
2017-06-14T17:09:39Z
2006
 
Type Article
 
Identifier Excitons and trions in spherical semiconductor quantum dots / I.M. Kupchak, Yu.V. Kryuchenko, D.V. Korbutyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 8, № 1. — С. 1-8. — Бібліогр.: 32 назв. — англ.
1560-8034
PACS 71.35.Pq, 71.35.-y
http://dspace.nbuv.gov.ua/handle/123456789/121578
 
Language en
 
Relation Semiconductor Physics Quantum Electronics & Optoelectronics
 
Publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України