Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films
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| Creator |
Indutnyy, I.Z.
Lysenko, V.S. Min'ko, V.I. Nazarov, A.N. Tkachenko, A.S. Shepeliavyi, P.E. Dan'ko, V.A. Maidanchuk, I.Yu. |
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| Description |
Effect of hydrogen radiofrequency plasma and chemical treatment on photoluminescence (PL) spectra of SiOx layers containing Si nanoparticles are investigated. Considerable PL intensity growth in the samples containing Si nanocrystals (nc-Si-SiOx) after plasma treatment is observed. The process saturates for time of 15 minutes. Chemical treatment in ammonia and acetone vapour before thermal annealing of SiOx layers leads to the considerable changes in PL spectra effecting both on the band shape and on the intensity. The possibility of controlled changes in PL spectra in nc-Si-SiO₂ layers is shown.
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| Date |
2017-06-14T17:12:09Z
2017-06-14T17:12:09Z 2006 |
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| Type |
Article
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| Identifier |
Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films / I.Z. Indutnyy, V.S. Lysenko, I.Yu. Maidanchuk, V.I. Min'ko, A.N. Nazarov, A.S. Tkachenko, P.E. Shepeliavyi, V.A. Dan'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 8, № 1. — С. 9-13. — Бібліогр.: 18 назв. — англ.
1560-8034 PACS 78.66.Jg http://dspace.nbuv.gov.ua/handle/123456789/121580 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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