Photoresponse in Ge/Si nanostructures with quantum dots
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Photoresponse in Ge/Si nanostructures with quantum dots
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| Creator |
Nikolenko, A.S.
Kondratenko, S.V. Vakulenko, O.V. |
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| Description |
Photovoltaic properties of Si samples with Ge quantum dots were studied. Photosensitivity spectra and current-voltage characteristics at 90 and 290 K were investigated. Negative photoconductivity of samples was revealed in the spectral range of 0.6 to 1.1 eV. Irregular temperature dependence of photo-emf in the temperature interval from 100 to 250 K was measured and analyzed.
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| Date |
2017-06-14T17:23:27Z
2017-06-14T17:23:27Z 2006 |
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| Type |
Article
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| Identifier |
Photoresponse in Ge/Si nanostructures with quantum dots / A.S. Nikolenko, S.V. Kondratenko, O.V. Vakulenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 32-35. — Бібліогр.: 21 назв. — англ.
1560-8034 PACS 73.63.-8, 73.63.Kv http://dspace.nbuv.gov.ua/handle/123456789/121590 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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