Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group
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| Creator |
Vlasov, A.P.
Bonchyk, A.Yu. Fodchuk, I.M. Barcz, A. Swiatek, Z.T. Zaplitnyy, R.A. |
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| Description |
Presented here are the results of studying the controlled doping with elements of V group of the periodic table, arsenic As and antimony Sb, of narrow gap CdxHg₁₋xTe epitaxial layers during the isothermal growth from the vapour phase by the evaporation-condensation-diffusion method. Three types of impurity sources have been used for solid state doping: homogeneously doped with As(Sb) single crystal substrates of CdTe, As doped buffer CdyHg₁₋yTe (y > x) epitaxial layers obtained by RF sputtering in mercury glow discharge onto undoped CdTe substrates, and As(Sb) implanted undoped CdTe substrates. The results of comparative analysis of galvano-magnetic measurements and SIMS spectra indicated very high, practically nearly ~100 %, electrical activity of dopants in the CdxHg₁₋xTe epitaxially grown layers.
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| Date |
2017-06-14T17:24:50Z
2017-06-14T17:24:50Z 2006 |
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| Type |
Article
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| Identifier |
Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group / A.P. Vlasov, A.Yu. Bonchyk, I.M. Fodchuk, R.A. Zaplitnyy, A. Barcz, Z.T. Swiatek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 36-42. — Бібліогр.: 15 назв. — англ.
1560-8034 PACS 61.72.V; 72.80.E http://dspace.nbuv.gov.ua/handle/123456789/121591 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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