Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials
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| Creator |
Denbnovetsky, S.V.
Slobodyan, N.V. |
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| Description |
In the work, non-destructive testing the Si and Ge semiconductors by pulse X-ray sources is discussed. Mathematical simulation of the radiation generation in reflection and transmission anode tubes is performed. Details of energy spectrum formation in these pulse tubes are analyzed, and its transformation when passing through thin samples of semiconductor materials is discussed. The dependence of the amount of radiation absorbed by the samples on the amplitude of acceleration voltage is calculated. It is shown how the pulse operation regime and design features of pulse tubes influence the characteristics of the X-ray radiation.
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| Date |
2017-06-14T17:32:41Z
2017-06-14T17:32:41Z 2006 |
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| Type |
Article
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| Identifier |
Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials / S.V. Denbnovetsky, N.V. Slobodyan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 68-72. — Бібліогр.: 10 назв. — англ.
1560-8034 PACS 61.10.Nz http://dspace.nbuv.gov.ua/handle/123456789/121595 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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