Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase
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| Creator |
Shutov, S.V.
Baganov, Ye.A. |
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| Description |
Influence of strains that appear in GaSb/InAs heterosystem on heteroepitaxial layer planarity is considered. It is shown that minimal supercooling of solution-melt at the saturation temperature of gallium antimonide in gallium melt 450 ºC is 7.8 ºС for [111] and 5.8 ºС for [100] growth directions. Calculated are the minimal growth rate 22 nm/s that is necessary for prevention of distortion appearance of epitaxial layer surface caused by elastic strains and the critical thicknesses of misfit dislocation formation – 50 and 54 nm for the [100] and [111] growth directions, respectively. It is shown experimentally that the lack of minimal supercooling leads to the island growth mode.
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| Date |
2017-06-14T17:10:12Z
2017-06-14T17:10:12Z 2006 |
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| Type |
Article
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| Identifier |
Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase / S.V. Shutov, Ye.A. Baganov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 84-87. — Бібліогр.: 17 назв. — англ.
1560-8034 PACS 81.05.Ea, 81.15.Lm http://dspace.nbuv.gov.ua/handle/123456789/121579 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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