Microwave irradiation of gallium arsenide
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Microwave irradiation of gallium arsenide
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| Creator |
Red'ko, R.
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| Description |
To study an influence of the microwave irradiation on a spectrum of defect states in semiconductor compound GaAs, we used measurements of luminescence spectra within the range 0.5 to 2.04 eV at 77 К before and after long (up to 13 min) treatments in air in the operation chamber of a magnetron at the frequency 2.45 GHz and surface power density 7.5 W/cm2. It was obtained that, already on the smallest irradiation exposure, the spectra of defects in researched samples essentially changed as well as concentrations of local centers changed. A "transfer" of intensity from the band with the peak 1.04 eV to the that peaking at 1.3 eV was observed.
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| Date |
2017-06-14T17:22:14Z
2017-06-14T17:22:14Z 2006 |
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| Type |
Article
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| Identifier |
Microwave irradiation of gallium arsenide / R. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 97-98. — Бібліогр.: 4 назв. — англ.
1560-8034 PACS 71.55.-I, 61.72.-y http://dspace.nbuv.gov.ua/handle/123456789/121588 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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