Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta
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| Creator |
Madatov, R.S.
Tagiyev, B.G. Najafov, A.I. Tagiyev, T.B. Gabulov, I.A. Shakili, Sh.P. |
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| Description |
The influence of γ-quanta irradiation on photoelectrical and optical properties of lamellar GaS single crystals at different temperatures has been investigated. It is determined that the irradiation of pure crystals at the radiation dose equal to 30 krad results in the creation of shallow compensative acceptors, which are photoactive recombination centers (r-centers), and as a result of this both the photosensitivity and a luminescence connected with r-centers are increased. Irradiation with a radiation dose more than 100 krad results in the quenching of both photosensitivity and recombination luminescence due to formation of complexes [VGa VS]. It is proposed that radiative recombination centers arising in the course of irradiation is conditioned by sulfur hole and interstitial gallium atoms.
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| Date |
2017-06-14T11:05:16Z
2017-06-14T11:05:16Z 2006 |
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| Type |
Article
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| Identifier |
Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta / R.S. Madatov, B.G. Tagiyev, A.I. Najafov, T.B. Tagiyev, I.A. Gabulov, Sh.P. Shakili // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 8-11. — Бібліогр.: 12 назв. — англ.
1560-8034 PACS 61.82.Fk, 71.55.-i, 78.55.-m http://dspace.nbuv.gov.ua/handle/123456789/121442 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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