Simulation of strain fields in GaSb/InAs heteroepitaxial system
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Simulation of strain fields in GaSb/InAs heteroepitaxial system
|
|
| Creator |
Shutov, S.V.
Baganov, Ye.A. |
|
| Description |
Mechanical strains taking place in GaSb/InAs heterosystem in the presence of misfit dislocation network are investigated. Distributions of energy of strains and deformations in the system with misfit dislocation network were found using two-dimensional simulation. The radius of the dislocation core, depths of the strain penetration into the substrate and epitaxial layer as well as change of the material bandgaps near the heterointerface were calculated.
|
|
| Date |
2017-06-14T10:13:39Z
2017-06-14T10:13:39Z 2006 |
|
| Type |
Article
|
|
| Identifier |
Simulation of strain fields in GaSb/InAs heteroepitaxial system / S.V. Shutov, Ye.A. Baganov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 23-25. — Бібліогр.: 7 назв. — англ.
1560-8034 PACS 81.05.Ea, 83.85.St, 68.35.Ct http://dspace.nbuv.gov.ua/handle/123456789/121427 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|