Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs
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| Creator |
Khemissi, S.
Merabtine, N. Zaabat, M. Kenzai, C. Saidi, Y. Amourache, S. |
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| Description |
In the information sciences such as computer science, telecommunications, the treatment of signal or image transmission, the field effect components play an important role. In the frame of our work, we are interested in the study of the gallium arsenide short gate field effect transistor called GaAs MESFET. After analytical studying the component static characteristics, according to different operation regimes, a numerical simulation was worked out. The influence of technological dimensions (L, Z, a, and Nd) was studied. The obtained results allow us to determine optimal parameters of the devices from the viewpoint of their applications and specific use.
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| Date |
2017-06-14T10:15:30Z
2017-06-14T10:15:30Z 2006 |
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| Type |
Article
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| Identifier |
Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs / S. Khemissi, N. Merabtine, M. Zaabat, C. Kenzai, Y. Saidi, S. Amourache // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 34-39. — Бібліогр.: 9 назв. — англ.
1560-8034 PACS 85.30.Tv http://dspace.nbuv.gov.ua/handle/123456789/121429 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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