Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures
|
|
| Creator |
Boltovets, N.S.
Konakova, R.V. Kudryk, Ya.Ya. Milenin, V.V. Mitin, V.F. Mitin, E.V. Lytvyn, O.S. Kapitanchuk, L.M. |
|
| Description |
We consider ohmic contacts to the n-InSb epitaxial layers grown on a semi-insulating GaAs substrate. The ohmic contacts are formed through titanium metallization with subsequent gilding. Using the structural (AFM and XRD) and analytical (AES) techniques, we showed that thermal annealings at Т = 300 °С (for 60 s) and 360 °С (for 30 s) do not change the phase composition of the metallization. This ensures thermal stability of the contacts and Hall sensors made on the basis of Au–Ti–n-InSb–GaAs(i) structures.
|
|
| Date |
2017-06-14T10:52:32Z
2017-06-14T10:52:32Z 2006 |
|
| Type |
Article
|
|
| Identifier |
Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures / N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, V.F. Mitin, E.V. Mitin, O.S. Lytvyn, L.M. Kapitanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 58-60. — Бібліогр.: 2 назв. — англ.
1560-8034 PACS 81.05.Rm http://dspace.nbuv.gov.ua/handle/123456789/121434 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|