Micropatterning in bistable cholesteric device with Bragg's reflection
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Micropatterning in bistable cholesteric device with Bragg's reflection
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| Creator |
Gritsenko, M.I.
Kucheev, S.I. Lytvyn, P.M. Tishenko, V.G. Tkach, V.M. Yelshansky, V.B. |
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| Description |
In this work, the method to form bistable patterning in a cholesteric cell with Bragg’s reflection in the visible spectral range is demonstrated. In order to reach this, we used a Si/SiO₂ structure in which a potential relief on SiO₂ surface is induced due to enrichment and depletion of required form areas of the silicon near-surface layer during external electric field action. The patterning of enrichment is determined by the positive charge embedded into SiO₂ film, which is formed by thermodiffusion of aluminum atoms.
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| Date |
2017-06-14T10:54:40Z
2017-06-14T10:54:40Z 2006 |
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| Type |
Article
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| Identifier |
Micropatterning in bistable cholesteric device with Bragg's reflection / M.I. Gritsenko, S.I. Kucheev, P.M. Lytvyn, V.G. Tishenko, V.M. Tkach, V.B. Yelshansky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 61-64. — Бібліогр.: 14 назв. — англ.
1560-8034 PACS 42.79.Kr, 89.75 Kd http://dspace.nbuv.gov.ua/handle/123456789/121435 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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