Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x
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| Creator |
Venger, E.F.
Knorozok, L.M. Melnichuk, L.Yu. Melnichuk, O.V. |
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| Description |
We consider the growth technology and investigations of indium antimonide doped concurrently with acceptor (Сd) and donor (Те) impurities taken in equiatomic ratio. The optimal modes of single crystal synthesis and crystallization are determined. It is shown that, when doping the indium antimonide, its lattice parameter changes considerably. This leads to deformation of the electron energy spectrum, changes the bandgap and charge carrier effective mass and affects the optical and electrical properties of indium antimonide samples. As a result, such material becomes suitable for fabrication of IR photodetectors.
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| Date |
2017-06-14T10:57:59Z
2017-06-14T10:57:59Z 2006 |
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| Type |
Article
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| Identifier |
Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x / E.F. Venger, L.M. Knorozok, L.Yu. Melnichuk, O.V. Melnichuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 80-86. — Бібліогр.: 11 назв. — англ.
1560-8034 PACS 72.80.Ey, 78.30.Fs http://dspace.nbuv.gov.ua/handle/123456789/121438 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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