Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals
|
|
| Creator |
Bratus, O.L.
Evtukh, A.A. Steblova, O.V. Prokopchuk, V.M. |
|
| Description |
The current transport through insulating SiO₂ films with silicon nanocrystals in Si/SiO₂(Si)/Al structures has been investigated in the wide range of temperatures (82…350 K). The nanocomposite SiO₂(Si) films containing the silicon nanoclusters embedded into insulating SiO₂ matrix have been obtained by ion-plasma sputtering of silicon target and subsequent high-temperature annealing. Based on the detailed analysis of current-voltage characteristics, calculation of some electrical parameters has been performed and the mechanism of electron conductivity of nanocomposite SiO₂(Si) films has been ascertained. The electrical conductivity of the films is based on the mechanism of hopping conductivity with variable-range hopping through the traps near the Fermi level.
|
|
| Date |
2017-06-14T15:11:13Z
2017-06-14T15:11:13Z 2016 |
|
| Type |
Article
|
|
| Identifier |
Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals / O.L. Bratus, A.A. Evtukh, O.V. Steblova, V.M. Prokopchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 9-13. — Бібліогр.: 11 назв. — англ.
1560-8034 DOI: 10.15407/spqeo19.01.009 PACS 72.20.Ее, 73.63.Bd http://dspace.nbuv.gov.ua/handle/123456789/121517 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|