Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity
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| Creator |
Konoreva, O.V.
Lytovchenko, M.V. Malyi, Ye.V. Olikh, Ya.M. Petrenko, I.V. Pinkovska, M.B. Tartachnyk, V.P. |
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| Description |
The effect of ultrasonic (US) treatment on electroluminescence of initial and irradiated with 2-MeV electrons (Φ = 8.24·10¹⁴ e/cm²) GaAs-GaP LEDs grown on solid solution base was studied. It was found that luminescence intensity of samples previously loaded with US increased during long-term storage (t = 15 h). Passing the current through the diode generates the relaxation process of radiation brightness falling followed by the growth when ultrasound is switched on. The results of calculation of the dislocation density responsible for electroluminescence quenching within the region of electroluminescence degradation are adduced. It was found the ultrasound effect on diodes irradiated with high-energy electrons.
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| Date |
2017-06-14T15:14:14Z
2017-06-14T15:14:14Z 2016 |
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| Type |
Article
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| Identifier |
Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity / O.V. Konoreva, M.V. Lytovchenko, Ye.V. Malyi, Ya.M. Olikh, I.V. Petrenko, M.B. Pinkovska, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 34-38. — Бібліогр.: 20 назв. — англ.
1560-8034 DOI: 10.15407/spqeo19.01.034 PACS 29.40.-n, 85.30.-z, 85.60.Dw http://dspace.nbuv.gov.ua/handle/123456789/121521 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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