Features of tensoresistance in single crystals of germanium and silicon with different dopants
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Features of tensoresistance in single crystals of germanium and silicon with different dopants
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| Creator |
Baranskii, P.I.
Gaidar, G.P. |
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| Description |
Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of ρX /ρ₀ = f(X) function, which depend on individual physical-chemical properties of dopants, have been discussed in this paper.
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| Date |
2017-06-14T15:15:49Z
2017-06-14T15:15:49Z 2016 |
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| Type |
Article
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| Identifier |
Features of tensoresistance in single crystals of germanium and silicon with different dopants / P.I. Baranskii, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 39-43. — Бібліогр.: 19 назв. — англ.
1560-8034 DOI: 10.15407/spqeo19.01.039 PACS 61.82.Fk http://dspace.nbuv.gov.ua/handle/123456789/121522 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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