Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations
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| Creator |
Vlaskina, S.I.
Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. |
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| Description |
Peculiarities of photoluminescence spectra behavior in SiC crystals and thin films with in-grown defects during phase transformations have been studied. On the deep-level(DL)-spectra, as an example, their characteristics and behavior were investigated. It has been shown that all DL spectra have the same logic of construction and demonstrate identical behavior of the thin structure elements.
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| Date |
2017-06-14T15:19:29Z
2017-06-14T15:19:29Z 2016 |
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| Type |
Article
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| Identifier |
Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 62-66. — Бібліогр.: 14 назв. — англ.
1560-8034 DOI: 10.15407/spqeo19.01.062 PACS 64.70.K-, 78.60.Lc, 81.30.-t http://dspace.nbuv.gov.ua/handle/123456789/121526 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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