Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
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| Creator |
Iliash, S.A.
Kondratenko, S.V. Yakovliev, A.S. Kunets, Vas.P. Mazur, Yu.I. Salamo, G.J. |
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| Description |
Thermally stimulated conductivity of the InGaAs-GaAs heterostructures with quantum wires was studied using different quantum energies of exciting illumination. The structures reveal long-term photoconductivity decay within the temperature range 100 to 200 K, and effect of residual conductivity after turning-off the illumination. Analyzing the data of thermally stimulated conductivity, the following energies of electron traps were found: 90, 140, and 317 meV. The role of deep traps in recombination process as well as the photoconductivity mechanism was discussed.
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| Date |
2017-06-14T15:20:39Z
2017-06-14T15:20:39Z 2016 |
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| Type |
Article
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| Identifier |
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures / S.A. Iliash, S.V. Kondratenko, A.S. Yakovliev, Vas.P. Kunets, Yu.I. Mazur, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 75-78. — Бібліогр.: 7 назв. — англ.
1560-8034 DOI: 10.15407/spqeo19.01.075 PACS 72.40.+w, 73.40.-e, 73.63.Nm http://dspace.nbuv.gov.ua/handle/123456789/121528 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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