ZnTe-based UV sensors
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
ZnTe-based UV sensors
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| Creator |
Pavelets, S.Yu.
Bobrenko, Yu.N. Semikina, T.V. Sheremetova, G.I. Аtdaiev, В.S. Krulikovska, K.B. Маzin, М.А. |
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| Description |
A р-ZnTe/n-CdSe heterojunction was used for making polycrystalline ZnTebased UV sensors. The heteropair components have the same crystal structure and close lattice parameters. ZnTe and CdSe were grown using thermal evaporation and quasiclosed space condensation. A transparent current collecting electrode for the surfacebarrier structure of р-ZnTe/n-CdSe heterojunction was made of degenerate p-Cu₁.₈S. Surface relief of ZnTe grown on different substrates was studied with scanning atomic force microscopy. The energy band offset diagrams of heterojunction are built and photosensitivity spectra are presented.
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| Date |
2017-06-14T16:47:23Z
2017-06-14T16:47:23Z 2016 |
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| Type |
Article
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| Identifier |
ZnTe-based UV sensors / S.Yu. Pavelets, Yu.N. Bobrenko, T.V. Semikina, G.I. Sheremetova, В.S. Аtdaiev, K.B. Krulikovska, М.А. Маzin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 197-200. — Бібліогр.: 11 назв. — англ.
1560-8034 DOI: 10.15407/spqeo19.02.197 PACS 73.20.At, 73.40.Kp, 84.60.Jt http://dspace.nbuv.gov.ua/handle/123456789/121564 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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