Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments
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| Creator |
Milenin, G.V.
Red’ko, R.A. |
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| Description |
Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented.
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| Date |
2017-06-14T17:39:48Z
2017-06-14T17:39:48Z 2016 |
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| Type |
Article
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| Identifier |
Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments / G.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 279-284. — Бібліогр.: 29 назв. — англ.
1560-8034 DOI: 10.15407/spqeo19.03.279 PACS 72.20.Jv, 75.60.Lr, 78.55.Cr http://dspace.nbuv.gov.ua/handle/123456789/121600 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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