Electrical properties of InSb p-n junctions prepared by diffusion methods
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Electrical properties of InSb p-n junctions prepared by diffusion methods
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| Creator |
Sukach, A.V.
Tetyorkin, V.V. Tkachuk, A.I. |
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| Description |
InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias voltage. The highest values of the resistance-area product at zero bias have been obtained for the junctions prepared using the two-stage diffusion process.
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| Date |
2017-06-14T17:53:19Z
2017-06-14T17:53:19Z 2016 |
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| Type |
Article
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| Identifier |
Electrical properties of InSb p-n junctions prepared by diffusion methods / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 295-298. — Бібліогр.: 20 назв. — англ.
1560-8034 DOI: 10.15407/spqeo19.03.295 PACS 73.40.Gk, 73.40.Kp http://dspace.nbuv.gov.ua/handle/123456789/121603 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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