Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K
|
|
| Creator |
Abbasov, Sh.M.
Agaverdiyeva, Y.T. Kerimova, T.I. |
|
| Description |
Ge₁₋xSix solid solutions are one of promissing materials for semiconductor technique. However, their electrical and optical properties, especially with silicon content more than 5 at. % have been little studied. In particular, in the number of works [1-3] there have been presented the experimental results of study in the region 0.52 eV in germanium irradiated by fast electrons, gamma-rays and protons at the temperature of liquid nitrogen. In the literature, however, there are no data on studying the absorption band in the range 0.52 eV in Ge₁₋xSix solid solution irradiated by fast electrons.
|
|
| Date |
2017-06-15T03:03:41Z
2017-06-15T03:03:41Z 2006 |
|
| Type |
Article
|
|
| Identifier |
Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K / Sh.M. Abbasov, Y.T. Agaverdiyeva, T.I. Kerimova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 22-24. — Бібліогр.: 10 назв. — англ.
1560-8034 PACS 42.25.Bs, 61.82.Fk http://dspace.nbuv.gov.ua/handle/123456789/121613 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|