Photoelectric properties of single crystals Ag₃In₅Se₉
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Photoelectric properties of single crystals Ag₃In₅Se₉
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| Creator |
Huseynov, A.H.
Mamedov, R.M. |
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| Description |
Low-resistance and high-resistance single crystals of Ag₃In₅Se₉ compound have been grown using the methods of zone recrystallization and slow cooling at a constant gradient of temperature. We have investigated spectral and lux-ampere characteristics of photoconductivity and determined the mechanism of recombination inherent to non-equilibrium current carriers. It has been ascertained that the capture of electrons emitted by donor centers is caused by a strong electric field applied to a sample.
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| Date |
2017-06-15T03:05:07Z
2017-06-15T03:05:07Z 2006 |
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| Type |
Article
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| Identifier |
Photoelectric properties of single crystals Ag₃In₅Se₉ / A.H. Huseynov, R.M. Mamedov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 25-28. — Бібліогр.: 7 назв. — англ.
1560-8034 PACS 72.40.+w http://dspace.nbuv.gov.ua/handle/123456789/121614 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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