Active inductances controlled in GaAs MESFET technology
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Active inductances controlled in GaAs MESFET technology
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| Creator |
Benbouza, M.S.
Kenzai-Azizi, C. Merabtine, N. Saidi, Y. Amourache, S. |
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| Description |
Two new structures of active inductance which implement MESFET transistors are proposed in this article. The technological parameters of the components of “inductances” are those of 0.8 µm MESFET technology. We expose the advantages of these new structures such as the adjustable character of the value of the active inductance like their limitation, and we compare them to those of the literature.
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| Date |
2017-06-15T03:07:15Z
2017-06-15T03:07:15Z 2006 |
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| Type |
Article
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| Identifier |
Active inductances controlled in GaAs MESFET technology / M.S. Benbouza, C. Kenzai-Azizi, N. Merabtine, Y. Saidi, S. Amourache // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 44-48. — Бібліогр.: 9 назв. — англ.
1560-8034 PACS 84.37.+q, 85.30. Tv http://dspace.nbuv.gov.ua/handle/123456789/121617 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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