Disappearance of aligning properties of deposited SiOx films as caused by external factors
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Disappearance of aligning properties of deposited SiOx films as caused by external factors
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| Creator |
Kolomzarov, Yu.
Oleksenko, P. Sorokin, V. Tytarenko, P. Zelinskyy, R. |
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| Description |
Thermal and degradation stability of SiOx aligning films deposited by cathode reactive sputtering (CRS) in glow discharge plasma were investigated. It was shown that a heat treatment and other external factors initiate transformations on the surface of aligning film and provided new conditions at the interface. This leads to a change of slight axis orientation direction of LC molecules and appearance of various defects in the LC aligned structures. The technological ways to increase the aligning layer durability under influence of external factors were proposed.
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| Date |
2017-06-15T03:09:42Z
2017-06-15T03:09:42Z 2006 |
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| Type |
Article
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| Identifier |
Disappearance of aligning properties of deposited SiOx films as caused by external factors / Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 60-65. — Бібліогр.: 13 назв. — англ.
1560-8034 PACS 61.30.Gd, 81.65.Cf, 61.25.Em http://dspace.nbuv.gov.ua/handle/123456789/121620 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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