Ultra-high field transport in GaN-based heterostructures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
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Ultra-high field transport in GaN-based heterostructures
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| Creator |
Vitusevich, S.A.
Danylyuk, S.V. Danilchenko, B.A. Klein, N. Zelenskyi, S.E. Drok, E. Avksentyev, A.Yu. Sokolov, V.N. Kochelap, V.A. Belyaev, A.E. Petrychuk, M.V. Luth, H. |
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| Description |
This paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns was used. The experimental results indicate that overheating of the 2DEG does not exceed 1000 K in this electric field range and drift velocity as high as ~10⁷ cm/s was obtained. Additionally, the low frequency 1/f noise spectra measured for a different bias voltage are analyzed with respect to field-induced contribution of hopping conductivity in AlGaN barrier region.
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| Date |
2017-06-15T03:10:37Z
2017-06-15T03:10:37Z 2006 |
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| Type |
Article
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| Identifier |
Ultra-high field transport in GaN-based heterostructures / S.A. Vitusevich, S.V. Danylyuk, B.A. Danilchenko, N. Klein, S.E. Zelenskyi, E. Drok, A.Yu. Avksentyev, V.N. Sokolov, V.A. Kochelap, A.E. Belyaev, M.V. Petrychuk, H. Luth // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 66-69. — Бібліогр.: 8 назв. — англ.
1560-8034 PACS 72.20.Ht, 72.80.Ey, 73.40.-c http://dspace.nbuv.gov.ua/handle/123456789/121621 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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