Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy
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| Creator |
Rogozin, I.V.
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| Description |
Epitaxial undoped and N-doped ZnO films were obtained using the method of radical beam gettering epitaxy. Structural and luminescent properties of the obtained films were researched. In both cases, there can be seen orientation of the films along c-axis. In the spectrum of low-temperature photoluminescence of N-doped ZnO films, observed was a peak 3.31 eV probably of a neutral acceptor-bound exciton NO. The nature of donor-acceptor band 3.23 eV and green band 2.56 eV was discussed.
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| Date |
2017-06-15T03:12:09Z
2017-06-15T03:12:09Z 2006 |
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| Type |
Article
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| Identifier |
Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy / I.V. Rogozin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 79-82. — Бібліогр.: 27 назв. — англ.
1560-8034 PACS 61.10.Nz, 61.72.Ji, 68.37.Ps, 78.30.Fs, 78.55.Et http://dspace.nbuv.gov.ua/handle/123456789/121623 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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