Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe
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| Creator |
Babentsov, V.N.
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| Description |
The defects in CdTe and CdSe nanocrystals were studied by comparing the photoluminescence spectra and cyclic voltammetry dependences, which enabled us to identify two main electron levels in CdTe and four in CdSe NCs. In CdTe nanocrystals these levels are: a hole trap at the energy EV + 0.5 eV and an electron trap at Ec – 0.5 eV. In CdSe nanocrystals, detected were two hole traps at Ev + 0.52 eV and Ev + 0.8 eV, and two electron traps at Ec – 0.25 eV and Ec – 0.65 eV. The 2+/1+ level of VCd or Tei is suggested to be an acceptor, and the 2–/1– level of an antisite defect is suggested to be a donor level.
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| Date |
2017-06-15T02:55:59Z
2017-06-15T02:55:59Z 2006 |
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| Type |
Article
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| Identifier |
Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe / V.N. Babentsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 94-98. — Бібліогр.: 14 назв. — англ.
1560-8034 PACS 71.55.-I, 73.22.-f http://dspace.nbuv.gov.ua/handle/123456789/121609 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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