Electric properties of TlInS₂ single crystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Electric properties of TlInS₂ single crystals
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| Creator |
Mustafaeva, S.N.
Ismailov, A.A. Akhmedzade, N.D. |
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| Description |
Injection currents are studied in high-resistive layer of TlInS2 single crystals and the following parameters were determined: equilibrium concentration of charge carriers in the allowed band p0 = 1.67⋅10¹⁰ cm⁻³; concentration of traps Nt = 10¹²cm⁻³; capture factor θ = 0.17; mobility of charge carriers μ = 3.3⋅10⁻³cm²/V⋅s; the depth of trap level responsible for the injection current Et = 0.44 eV.
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| Date |
2017-06-15T03:43:26Z
2017-06-15T03:43:26Z 2006 |
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| Type |
Article
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| Identifier |
Electric properties of TlInS₂ single crystals / S.N. Mustafaeva, A.A. Ismailov, N.D. Akhmedzade // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 82-84. — Бібліогр.: 4 назв. — англ.
1560-8034 PACS 71.20.Nr; 72.20Fr; 72.20.Ht; 72.20 Jv http://dspace.nbuv.gov.ua/handle/123456789/121640 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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