Modelling vacancy microvoid formation in dislocation-free silicon single crystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Modelling vacancy microvoid formation in dislocation-free silicon single crystals
|
|
| Creator |
Talanin, V.I.
Talanin, I.E. Koryagin, S.A. Semikina, M.Yu. |
|
| Description |
An alternative mathematical model of vacancy microvoid formation in dislocation-free silicon single crystals was represented. The analysis of conditions of microvoid nucleation inside the bulk of crystals during cooling after their growth was carried out. The possibility of formation of a quasi-stationary microvoid profile in large-scale crystals within the temperature range 1130…1070 °С has been shown.
|
|
| Date |
2017-06-15T03:44:16Z
2017-06-15T03:44:16Z 2006 |
|
| Type |
Article
|
|
| Identifier |
Modelling vacancy microvoid formation in dislocation-free silicon single crystals / V.I. Talanin, I.E. Talanin, S.A. Koryagin, M.Yu. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 77-81. — Бібліогр.: 12 назв. — англ.
1560-8034 PACS 61.72Bb, 61.72.Jj, 61.72.Yx http://dspace.nbuv.gov.ua/handle/123456789/121641 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|