Amphoteric center of luminescence in CdS
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Amphoteric center of luminescence in CdS
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| Creator |
Artem'jeva, O. O.
Vakulenko, O. V. Dacenko, O. I. |
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| Description |
The impurity photoluminescence of cadmium sulphide crystals is studied. The luminescence intensity dependences on temperature from 80 to 300 K are obtained for the bands at 1.7 and 2 eV. The thermal curve of 1.7 eV luminescence intensity has a peak between 100 and 150 K. Both these bands are associated with emission of the center based on the VCd-type intrinsic point defect. The results can be explained within the framework of the theory of amphoteric centers of charge carrier recombination.
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| Date |
2017-06-15T03:51:00Z
2017-06-15T03:51:00Z 2005 |
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| Type |
Article
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| Identifier |
Amphoteric center of luminescence in CdS / O. O. Artem'jeva, O. V. Vakulenko, O. I. Dacenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 2. — С. 58-60. — Бібліогр.: 6 назв. — англ.
1560-8034 PACS: 71.55.Gs, 78.55.Et http://dspace.nbuv.gov.ua/handle/123456789/121645 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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