Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties
Vernadsky National Library of Ukraine
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties
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Creator |
Bortchagovsky, E.G.
Vasin, A.V. Lytvyn, P.M. Tiagulskyi, S.I. Slobodian, A.M. Verovsky, I.N. Strelchuk, V.V. Stubrov, Yu. Nazarov, A.N. |
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Description |
Exploiting CVD technique for carbon deposition from C₂H₂+H₂+N₂ mixture, a graphene-like film synthesized directly on SiO₂ surface of SiO₂-Si structure was obtained. The graphene-like film was grown under thin Ni layer that is easy exfoliated from graphene-SiO₂-Si structure. Surface of the film was sufficiently smooth and reveals no winkles and holes; it has a good homogeneity and perfect adhesion to SiO₂ layer. Studying the micro-Raman spectra showed a graphene-like structure of the film; using atomic force microscopic technique, the thickness of film was determined (0.6 nm). Using spectroscopic ellipsometry and simple Cauchy model enabled us to estimate optical parameters of this graphene-like film.
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Date |
2017-06-15T08:11:23Z
2017-06-15T08:11:23Z 2016 |
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Type |
Article
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Identifier |
Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties / E.G. Bortchagovsky, A.V. Vasin, P.M. Lytvyn, S.I. Tiagulskyi, A.M. Slobodian, I.N. Verovsky, V.V. Strelchuk, Yu. Stubrov, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 328-333. — Бібліогр.: 19 назв. — англ.
1560-8034 DOI: 10.15407/spqeo19.04.328 PACS 68.65.Pq, 78.67.Wj http://dspace.nbuv.gov.ua/handle/123456789/121652 |
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Language |
en
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Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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