Запис Детальніше

Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties

Vernadsky National Library of Ukraine

Переглянути архів Інформація
 
 
Поле Співвідношення
 
Title Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties
 
Creator Bortchagovsky, E.G.
Vasin, A.V.
Lytvyn, P.M.
Tiagulskyi, S.I.
Slobodian, A.M.
Verovsky, I.N.
Strelchuk, V.V.
Stubrov, Yu.
Nazarov, A.N.
 
Description Exploiting CVD technique for carbon deposition from C₂H₂+H₂+N₂ mixture, a graphene-like film synthesized directly on SiO₂ surface of SiO₂-Si structure was obtained. The graphene-like film was grown under thin Ni layer that is easy exfoliated from graphene-SiO₂-Si structure. Surface of the film was sufficiently smooth and reveals no winkles and holes; it has a good homogeneity and perfect adhesion to SiO₂ layer. Studying the micro-Raman spectra showed a graphene-like structure of the film; using atomic force microscopic technique, the thickness of film was determined (0.6 nm). Using spectroscopic ellipsometry and simple Cauchy model enabled us to estimate optical parameters of this graphene-like film.
 
Date 2017-06-15T08:11:23Z
2017-06-15T08:11:23Z
2016
 
Type Article
 
Identifier Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties / E.G. Bortchagovsky, A.V. Vasin, P.M. Lytvyn, S.I. Tiagulskyi, A.M. Slobodian, I.N. Verovsky, V.V. Strelchuk, Yu. Stubrov, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 328-333. — Бібліогр.: 19 назв. — англ.
1560-8034
DOI: 10.15407/spqeo19.04.328
PACS 68.65.Pq, 78.67.Wj
http://dspace.nbuv.gov.ua/handle/123456789/121652
 
Language en
 
Relation Semiconductor Physics Quantum Electronics & Optoelectronics
 
Publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України