Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes
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| Creator |
Romanets, P.M.
Belyaev, A.E. Sachenko, А.V. Boltovets, N.S. Basanets, V.V. Konakova, R.V. Slipokurov, V.S. Khodin, А.А. Pilipenko, V.А. Shynkarenko, V.V. Kudryk, Ya.Ya. |
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| Description |
The method of electrophysical diagnostic of n⁺-n-n⁺ structures at the etching stage of manufacturing process of power IMPATT diodes has been proposed. A numerical method for specific contacts resistance calculation of vertical ohmic contacts with a non-uniform doping level has been developed. Vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si both before and after etching were used for experimental checking this model. It has been computed the value of contact resistance in the interface metal–n⁺ with correction of contribution of n⁺-n and n-n⁺ resistances to the total resistance. The values of total effective resistances of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si may be calculated using the Cox–Strack method. We used solutions of Laplace’s equation for computation of specific contact resistance metal–n⁺ without contribution of interfaces n⁺-n and n-n⁺. The values of specific contact resistance were ~10⁻⁶ Ohm·cm². This method allows to control the manufacture process by monitoring the changes in electrophysical properties of the structure between etching cycles.
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| Date |
2017-06-15T08:19:15Z
2017-06-15T08:19:15Z 2016 |
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| Type |
Article
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| Identifier |
Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes / P.M. Romanets, A.E. Belyaev, А.V. Sachenko, N.S. Boltovets, V.V. Basanets, R.V. Konakova, V.S. Slipokurov, А.А. Khodin, V.А. Pilipenko, V.V. Shynkarenko, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 366-370. — Бібліогр.: 9 назв. — англ.
1560-8034 : 10.15407/spqeo19.04.366 PACS 73.40.Ns, 85.30.Kk http://dspace.nbuv.gov.ua/handle/123456789/121657 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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