Long-term radiation-induced optical darkening effects in chalcogenide glasses
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
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Long-term radiation-induced optical darkening effects in chalcogenide glasses
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| Creator |
Kavetskyy, T.S.
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| Description |
In this work, it is reported that the γ-irradiated (2.41 MGy accumulated dose) glasses As₂S₃ (∼2 mm thick) and Ge₁₅.₈As₂₁S₆₃.₂ (∼1 mm thick), both measured ∼10 years after γ-irradiation, exhibit radiation-induced optical darkening effect (i.e., long-wave shift of fundamental optical absorption edge). In the case of As₂S₃ glass, the observed longterm radiation-induced optical darkening effect is well comparable with that reported in literature for γ-irradiated (∼3 MGy accumulated dose) glass As₂S₃ (1.5 mm thick), measured directly after γ-irradiation. In view of practical application, this finding demonstrates the possibilities for development of innovative chalcogenide glass based long-term dosimeter systems with stable and controlled parameters. A possible general criterion for mechanisms of long-term radiation-induced structural changes in chalcogenide glasses has been also considered.
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| Date |
2017-06-15T09:25:27Z
2017-06-15T09:25:27Z 2016 |
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| Type |
Article
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| Identifier |
Long-term radiation-induced optical darkening effects in chalcogenide glasses / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 395-398. — Бібліогр.: 20 назв. — англ.
1560-8034 DOI: 10.15407/spqeo19.04.395 PACS 61.43.Fs, 61.80.Ed, 78.40.Fy, 78.40.Pg http://dspace.nbuv.gov.ua/handle/123456789/121681 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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