Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase
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| Creator |
Feychuk, P.
Kopyl, O. Pavlovich, I. Shcherbak, L. |
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| Description |
A modified vapor phase growth method to obtain high-resistive Cd1-xZnxTe single crystals (0 < x < 0.13) is presented. The single crystals (about 25 cm⁻³ in size) with natural faceting were grown by vapor transport in silica ampoules with a special shape using a polycrystalline ingot as initial source material. It is shown that minimization of plastic deformation effect in preparation of the most structurally perfect crystals is possible by a way of heat removal from the crystallization front by radiation. The growth of high-resistive material required careful preparation of the initial charge with close to stoichiometric composition. The obtained crystals were successfully tested for creating the room temperature X-ray and gamma-ray detectors. |
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| Date |
2017-06-19T12:44:18Z
2017-06-19T12:44:18Z 2005 |
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| Type |
Article
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| Identifier |
Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase / P. Feychuk, O. Kopyl, I. Pavlovich, L. Shcherbak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 110-113. — Бібліогр.: 15 назв. — англ.
1560-8034 PACS: 61.72y, 81.05, Dz; 81.10.Bk http://dspace.nbuv.gov.ua/handle/123456789/121862 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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