Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese
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| Creator |
Charikova, T.
Okulov, V. Gubkin, A. Lugovikh, A. Moiseev, K. Nevedomsky, V. Kudriavtsev, Yu. Gallardo, S. Lopez, M. |
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| Subject |
XX Уральская международная зимняя школа по физике полупроводников
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| Description |
The magnetic moment and magnetization in GaAs/Ga₀.₈₄In₀.₁₆As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (~3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga₀.₈₄In₀.₁₆As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found.
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| Date |
2017-06-26T05:11:20Z
2017-06-26T05:11:20Z 2015 |
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| Type |
Article
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| Identifier |
Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese / T. Charikova, V. Okulov, A. Gubkin, A. Lugovikh, K. Moiseev, V. Nevedomsky, Yu. Kudriavtsev, S. Gallardo, M. Lopez // Физика низких температур. — 2015. — Т. 41, № 2. — С. 207-209. — Бібліогр.: 9 назв. — англ.
0132-6414 PACS: 72.80.Ey, 75.50.Pp http://dspace.nbuv.gov.ua/handle/123456789/122039 |
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| Language |
en
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| Relation |
Физика низких температур
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| Publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
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