Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility
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| Creator |
Arapov, Yu.G.
Harus, G.I. Karskanov, I.V. Neverov, V.N. Shelushinina, N.G. Yakunin, M.V. |
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| Subject |
Электронные свойства низкоразмерных систем
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| Description |
The apparent insulator—quantum Hall—insulator (I—QH—I) transition for filling factor 1 has been investigated in p-type Ge/Ge₁₋xSix heterostructures with εFτ/h ≈ 1. Scaling analysis is carried out for both the low- and high-field transition point. In low magnetic fields ωcτ < 1 pronounced QH-like peculiarities for ν = 1 are also observed in both the longitudinal and Hall resistivities. Such behavior may be evidence of a localization effect in the mixing region of Landau levels and is inherent for two-dimensional structures in a vicinity of the metal—insulator transition. |
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| Date |
2017-12-23T21:28:25Z
2017-12-23T21:28:25Z 2007 |
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| Type |
Article
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| Identifier |
Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility / Yu.G Arapov, G.I. Harus, I.V. Karskanov, V.N. Neverov, N.G.Shelushinina, M.V. Yakunin // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 207-210. — Бібліогр.: 22 назв. — англ.
0132-6414 PACS: 73.40.–c, 73.43.–f http://dspace.nbuv.gov.ua/handle/123456789/127532 |
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| Language |
en
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| Relation |
Физика низких температур
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| Publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
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