Vertical spin transport in semiconductor heterostructures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Vertical spin transport in semiconductor heterostructures
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| Creator |
Sankowski, P.
Kacman, P. Majewski, J.A. Dietl, T. |
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| Subject |
Структура и свойства полупроводников с переходными элементами
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| Description |
The Landauer—B ttiker formalism combined with the tight-binding transfer matrix method is employed to model vertical coherent spin transport within magnetization modulated semiconductor heterostructures based on GaAs. This formalism provides excellent physical description of recent experiments concerning the high tunneling magnetoresistance (TMR) in (Ga,Mn)As-based trilayers and highly polarized spin injection in p-(Ga,Mn)As/n-GaAs Zener diode. For both the TMR and the Zener spin current polarization, the calculated values compare well with those observed in the experiments and the formalism reproduces the strong decrease of the observed effects with external bias. We ascribe this decrease to the band structure effects. The role played in the spin dependent tunneling by carrier concentration and magnetic ion content is also studied. |
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| Date |
2017-12-27T10:47:28Z
2017-12-27T10:47:28Z 2007 |
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| Type |
Article
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| Identifier |
Vertical spin transport in semiconductor heterostructures / P. Sankowski, P. Kacman, J.A. Majewski, T. Dietl // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 256-262. — Бібліогр.: 34 назв. — англ.
0132-6414 PACS: 75.50.Pp, 72.25.Hg, 73.40.Gk http://dspace.nbuv.gov.ua/handle/123456789/127727 |
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| Language |
en
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| Relation |
Физика низких температур
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| Publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
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