Low temperature electron transport on semiconductor surfaces
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Low temperature electron transport on semiconductor surfaces
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| Creator |
Lastapis, M.
Riedel, D. Mayne, A. Bobrov, K. Dujardin, G. |
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| Subject |
Electronically Induced Phenomena: Low Temperature Aspects
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| Description |
The low temperature electron transport on semiconductor surfaces has been studied using an ultra high vacuum, variable temperature Scanning Tunneling Microscope (STM). The STM I(V) spectroscopy recorded at various temperatures has enabled to investigate the temperature dependence (300 K to 35 K) of the surface conductivity of three different semiconductor surfaces: highly doped n-type Si(100), p-type Si(100), and hydrogenated C(100). Low temperature freezing of specific surface electronic channels on the higly doped n-type Si(100) and moderately doped p-type Si(100) surfaces could be achieved whereas the total surface conductivity on the hydrogenated C(100) surface can be frozen below only 180 K.
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| Date |
2018-01-14T09:03:18Z
2018-01-14T09:03:18Z 2003 |
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| Type |
Article
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| Identifier |
Low temperature electron transport on semiconductor surfaces / M. Lastapis, D. Riedel, A. Mayne, K. Bobrov, G. Dujardin // Физика низких температур. — 2003. — Т. 29, № 3. — С. 263-269. — Бібліогр.: 9 назв. — англ.
0132-6414 PACS: 72.20.Jv http://dspace.nbuv.gov.ua/handle/123456789/128815 |
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| Language |
en
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| Relation |
Физика низких температур
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| Publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
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